PDN4911S mosfets equivalent, p-channel mosfets.
* -40V,-2.9A, RDS(ON) =68mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications
Applications
* POL Applicati.
SOT23-3S Pin Configuration
D
D
S G
G
S
BVDSS -40V
RDSON 68m
ID -2.9A
Features
* -40V,-2.9A, RDS(ON) =68mΩ.
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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